Thermoelectric properties of doped titanium disulfides

Abstract

We report herein the doping of titanium disulfide (TiS2) with the pnictides (Pn): P, As, and Sb. The incorporation of these pnictides into titanium disulfide (TiS2−xPnx) is performed at extremely low concentrations (x∼0.2%). The effects on the electronic transport of titanium disulfide by doping with arsenic is quite profound, reducing the resistivity and thermopower to 0.2mΩcm and −35μV∕K at 300K, respectively, from 1.8mΩcm and −170μV∕K at 300K for the parent compound TiS2. For a wide range of thermopower values we find that the thermopower (α) of these doped titanium disulfides is linearly related to the infrared reflectivity minimum and can be correlated by the experimentally determined proportionality of λ=−0.0457α, where λ is the wavelength of the minimum.