Abstract
The thermoelectric power of silicon micro-samples grown by Czochralski method (Cz-Si) and annealed at 450 °C has been investigated at enhanced pressure up to 16 GPa. The correlation has been established between the thermoelectric power and pressure of the semiconductor-metal phase transition, on the one hand, and mechanical properties (microhardness, compressibility), on the other, for Cz-Si with different content of oxygen. Possible application of the studied properties for micro-device technology is discussed.
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