Abstract

AbstractWe investigated the effects on thermoelectric properties of Cu doping in Fe2‐xCuxVAl at Fe site of full‐Heusler type compound. It is found that the Cu doping for Fe sites causes a significant increase in the absolute value of Seebeck coefficient |S| and a decrease in thermal conductivity. The Seebeck coefficient (S)=‐148μV/K and the Power factor (PF)=4.0 mWK−2m−1 have been observed for Fe1.9Cu0.1VAl (x=0.1) at 300 K. To further improve it, we fixed the Cu doping level at x=0.1 in Fe2‐xCuxVAl and co‐doped the material with Si at Al site, namely, Fe1.9Cu0.1VAl1‐ySiy. The thermoelectric properties have been improved by Si doping to a certain limit. We observed a decrease in electrical resistivity and lattice thermal conductivity by Si doping for Al. The maximum power factor of 4.5 mWK−2m−1 has been achieved for Fe1.9Cu0.1Al0.9Si0.1 at 350 K. More precisely, the thermoelectric performance has been improved with co‐doping of Cu for Fe sites and Si for Al sites. The largest ZT value is 0.13 for Fe1.9Cu0.1VAl1‐ySiy (y=0.15). Magnetic susceptibility suggests that all the measured compounds are showing paramagnetic behavior. The magnetic character is the most pronounced in Fe1.9Cu0.1VAl among the materials investigated, pointing to a possible correlation between the magnetic character due to electronic correlation and the larger Seebeck coefficient in this sample.

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