Abstract

The polycrystalline samples of Ca3Co4-xGaxO9+δ (0 ≤ x ≤ 0.15) were prepared by a simple thermal hydro-decomposition method. The high density ceramics were fabricated using a spark plasma sintering technique. The crystal structure of calcined powders was characterized by x-ray diffraction. The single phase of Ca3Co4-xGaxO9+δ was obtained. The scanning electron micrograph illustrated the grain alignment perpendicular to the direction of the pressure in the sintering process. The evidence from x-ray absorption near edge spectra were used to confirm the oxidation state of the Ga dopant. The thermoelectric properties of the misfit-layered of Ca3Co4-xGaxO9+δ were investigated. Seebeck coefficient tended to decrease with increasing Ga content due to the hole-doping effect. The electrical resistivity and thermal conductivity were monotonically decreased with increasing Ga content. The Ga doping of x = 0.15 showed the highest power factor of 3.99 × 10-4 W/mK2 at 1,023 K and the lowest thermal conductivity of 1.45 W/mK at 1,073 K. This resulted in the highest ZT of 0.29 at 1,073 K. From the optical absorption spectra, the electronic structure near the Fermi level show no significant change with Ga doping.

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