Abstract
Through the use of nano‐Si wires as additive, a significant improvement in the thermoelectric (TE) properties of Mg2Si is achieved. SiNWs‐Mg2Si materials are prepared by a wet etching method followed by field activated pressure assisted synthesis (FAPAS). The results show that the presence of SiNWs successfully decouples the relationship between the electrical resistivity and the Seebeck coefficient of Mg2Si. The effect of doping with Bi is also investigated. The results show that the addition of Bi changed the scattering mechanism, and a zT value of 0.47 is determined at 800 K for Mg2Si0.99Bi0.01‐0.005SiNWs. The presence of MgO as an impurity and its effect on zT are discussed.
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