Abstract
Skutterudite CoSb3 material exhibits excellent thermoelectric properties for thermoelectric application. In this work, CoSb3 thin films were fabricated by direct current magnetron co-sputtering. The composition of thin films was controlled by regulating the deposition power of both Co and Sb. Then the as-deposited Sb-excess sample was chosen to process post-annealing. High-resolution transmission electron microscopy and X-ray diffraction, together with Raman analysis, demonstrate that the annealed samples have well-crystallized and nano-sized skutterudite CoSb3 structure. Hall measurement shows that specimens are P-type semiconductor. Both of the increasing of Seebeck coefficient and electric conductivity can be obtained when the samples annealed at appropriate temperature, indicating that thermally can improve its thermoelectric properties due to well-crystallized and nano-sized structure.
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