Abstract

We employed the p-type semiconductor InTe as an extrinsic phase mixing in the GeTe matrix for thermoelectric properties investigations on the (GeTe)1-x(InTe)x (x=0, 0.02, 0.04, 0.06, and 0.08) composites. We observed notable phenomena that a small amount of InTe has a significant influence on the thermoelectric properties as the primary host matrix in the (GeTe)1-x(InTe)x (x=0.02, 0.04, 0.06, and 0.08) composites. Even for small concentrations of InTe which possess lower thermal and electrical conductivities compared to those of GeTe, the thermoelectric properties of the (GeTe)1-x(InTe)x (x=0.02, 0.04, 0.06, and 0.08) composites are primarily influenced by the properties of InTe. We systematically elucidated the electrical conductivity of the (GeTe)1-x(InTe)x (x=0.02, 0.04, 0.06, and 0.08) composites through the application of effective medium theory (EMT). It is found that the effective media of the (GeTe)1-x(InTe)x (x=0.02, 0.04, 0.06, and 0.08) composites is an asymmetric medium insulator. The addition of InTe into GeTe reveals a significant decrease in total thermal conductivity due to reductions in both electronic and lattice thermal conductivity. Particularly, the decrease in lattice thermal conductivity was attributed to an increase in internal strain within the lattice induced by the addition of InTe. Consequently, the ZT values of the composite significantly increase across all temperature ranges. This study suggests that developing composites is an effective approach for enhancing thermoelectric performance, comparable to elemental doping, and demonstrates the ability to analyze the electrical properties of composite materials using EMT.

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