Abstract
A method for preparing single-phase ingots of GeTe-rich solid solutions (x<or=0.20) in the system (GeTe)1-x(AgBiTe2)x is developed. The temperature dependence (77 to approximately=900 K) of the thermoelectric power is measured. The curves for GeTe and GeTe-rich solid solutions are of similar shape. Using conventional transport theory, the lattice and electronic contributions to this effect are obtained. To explain the behaviour of diffusion and phonon-drag terms, the metallic expressions for both are used. On the basis of band-edge models of GeTe and AgBiTe2, the non-parabolic two-band Kane model of IV-VI compounds, and separate values of the electronic parts of the thermoelectric power, information about the Fermi energy and degree of degeneracy is obtained.
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