Abstract
The thermoelectric power as a function of specimen size for gallium single crystals and crystals doped with small percentages of indium has been measured along the three different directions of the orthorhombic lattice between 4.2 and 1.4 K by means of a superconducting potentiometer. From the observations of the temperature dependence of the size effects, evaluations were made of the derivative with respect to energy of the Fermi surface area and the mean free path along the three crystal axes. These data are tabulated. Along theA andB axes (∇ lnS F /∇E) E is about −0.65 eV−1, the negative sign indicating conduction by a band of holes, whereas along theC axis this derivative is positive, indicating conduction by a band of electrons of smaller dimensions. Among other information derived from measurement of the indium-doped samples was that the intrinsic contribution to the diffusion thermopower of In along theC axis of gallium is+2.7×10−8 T(V/K).
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