Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers

Abstract

Using ab-initio method and ballistic transport model, we study electron and phonon energy dispersion relations of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2. Their electron and heat transports as well as their thermoelectric properties are also studied under linear response regime with different doping types, crystal orientations, and temperatures. Our results show that electron and phonon transports are not very sensitive to crystal orientations because the differences between group velocity and transmission of these carriers along different transport directions are not significant. Furthermore, as temperature increases, first peak values of thermoelectric figure of merit (ZT1st peak) increase linearly except for monolayer n-type WSe2/MoSe2 and p-type WS2, which have higher increasing rates when temperature is high due to the electron transport contribution from an additional valley. Among these various conditions, the results show that all monolayers have similar ZT1st peak at low temperatures below 100 K, and p-type monolayer MoS2 has the largest ZT1st peak at room temperature while n-type WSe2 has the largest ZT1st peak at high temperatures.