Abstract
AgCrSe2 materials have shown the potential to be the promising thermoelectric materials due to the intrinsic ultralow lattice thermal conductivity enabled by the fluid-like motion of Ag ions in crystal structures. However, what important role the Ag point defects can play in promoting liquid-like conduction still remains a mystery. Moreover, understanding the electronic transport properties, specifically for clarifying the contribution of various impurity states, is of critical importance for improving the thermoelectric performance of AgCrSe2. Here, the thermoelectric properties of AgCrSe2 with various Ag content have been systematically investigated. It is found that the carrier concentration can be modulated in a broad range by inducing deep level impurity states, enabling a transition from degenerate semiconductor to nondegenerate one and a reliable evaluation on the thermoelectric transport properties. The single parabolic band model gives a good clarification regarding the increased electronic performance. Furthermore, the enhancement of the liquid-like effect triggered by the Ag vacancies contributes to the ultralow lattice thermal conductivity (∼0.25 W m−1 K−1). Eventually, a maximum figure of merit zT of ∼0.6 is realized in Ag0.97CrSe2 at 750 K. The present findings may shed light on the improvement of thermoelectric performance in AgCrSe2 materials.
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