Abstract

The transverse voltages generated in a ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ ferromagnetic semiconductor in planar Hall effect and transverse spin Seebeck effect configurations are systematically analyzed. The observed field dependences consist of symmetric and asymmetric contributions. The former is attributed to the planar Nernst effect in the magnetic film in the presence of an in-plane temperature gradient, while the latter is caused by the anomalous Nernst effect due to spurious out-of-plane temperature gradients with a coefficient as high as 500 $\ensuremath{\mu}V/K$. We also report on the experimental observation of the planar Hall effect measured at different temperatures. Using a Stoner-Wohlfarth model for data analysis, the anisotropy constants ${K}_{u}$ and ${K}_{c}$ of superimposed uniaxial and cubic anisotropies in the magnetic film are determined. The temperature dependence of the ${K}_{u}/{K}_{c}$ ratio reveals a gradual substitution of the cubic anisotropy dominating at low temperatures with the uniaxial anisotropy as the temperature rises. This behavior is confirmed by the simultaneous domain observation using Kerr microscopy, demonstrating different field evolutions of the domain structure at different temperatures.

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