Abstract
A simplified setup for thermoelectric effect spectroscopy (TEES) was introduced. This was applied for measurements on semi-insulating GaN, grown on a sapphire substrate in order to investigate deep level traps. TEES currents were found to be negative at lower temperatures and positive at higher temperatures, indicating that shallower levels belong to electron traps, and deeper levels to hole traps. Traps were fully characterized by using the thermally stimulated current measurements and the simultaneous multiple peak analysis method. The shallowest observed electron and hole traps have activation energies E C −0.09 eV and E V +0.167 eV, respectively. The possible microscopic origin of analyzed defects was discussed.
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