Abstract
The thermoelectric response of high mobility (∼20 000 cm2/V s at 4 K) single layer epitaxial graphene on silicon carbide substrates has been experimentally investigated. The temperature dependence of the thermopower displays a strong deviation from the Mott relation at a carrier density of 1 × 1012 cm−2, reflecting the importance of the screening effect. In the quantum Hall regime, the amplitude of the thermopower peaks is lower than a quantum value, despite the high mobility of the sample. In addition, a temperature dependence for the amplitude is observed, unexpected by theories. The Nernst signal changes it sign as the magnetic field increases.
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