Abstract
P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed.
Highlights
The thermoelectricity is a promising technique to overcome the issues in recovering waste heat to electricity without using moving parts
Structural and Microstructural Characterizations The grazing incidence X-ray diffraction (GIXRD) patterns of CuCrO2:Mg thin films annealed for 4 h at various temperature in the 450 to 650T°hCeteGmIXpRerDatupraettrearnngs eouf nCdueCr rpOri2m:Margytvhaincufiulmmshaavnenebaeleend mfoeras4urhedatfovrarailol ussamtepmlepse. rTahtueraes-in dethpeos4i5te0dtosa6m50pl◦eCatnedmptheerastaumreprlaenagnenuenaldeedr aptri4m50ar°yCvawceuruemamhaovrpehboeuesn omr enaasnuorecdryfsotarllailzlesda.mTphlees. saTmhpe laes-daenpnoesailteedd saabmovpele 5a0n0d °tChe csoarmrepslpeoanndneedaletod atht e45t0ar◦gCetwperaettaemrnoropfhCouusCorOr n2 avneorcifryyisntgalltizhed. rhTohme bsoahmepdlreasl aRn-3nmealsepdacaebgorvoeu5p00[87◦C] (Fcoigrurersep2o)n. dTehde ftuollthweidtatrhgaet hpaltftemrnaxoimf CuumC(rFOW2 HveMri)fyfoinrgthtehe perhakom(0b1o2h)eddercarleRas-3emd sstproanceglgyrowuipth[8i7n]cr(eFaigsiunrge 2a)n.nTehaleinfuglltewmidptehraattuhreal(fAmTa),xuimputmo 5(5F0W°HCM
In order to check the stability of the delafossite phase during the various measurements in temperature, a GIXRD analysis was done after a thermal treatment at 240 ◦C under air atmosphere for all samples
Summary
The thermoelectricity is a promising technique to overcome the issues in recovering waste heat to electricity without using moving parts. The performance of the TE materials is described by the dimension less figure of merit ZT [1] In these equations, σ and S are respectively the electrical conductivity and the Seebeck coefficient [3] at the given temperature T and Ke and Kth are respectively due to the electron transport and the lattice phonon at the given temperature T. The work is focused on the determination of electrical conductivities and TE properties (Seebeck coefficient and calculated power factor) in temperature ranging from 40 to 220 ◦C for one set of CuCrO2 films annealed at various temperatures, with a fixed thickness of 300 nm
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
