Thermoelectric and photovoltaic properties of 12-BaBi2S4

Abstract

In this report, we have investigated the structure and properties of the 12-BaBi2S4. A single crystal X-ray diffraction study shows that the 12-BaBi2S4 crystallizes in the hexagonal crystal system (space group = P63/m) with refined lattice parameters of a = b = 25.2687(10) Å, c = 4.1859(2) Å, and formula unit = Z = 12 at room temperature. The structure contains fifteen crystallographic independent sites, including three Ba, four Bi, and eight types of S atoms. A phase pure polycrystalline sample of 12-BaBi2S4 was synthesized by heating stoichiometric amounts of BaCO3 and Bi2O3 under a CS2 atmosphere. The phase pure sample is found to be a semiconductor with a direct bandgap of 1.3(1) eV. The polycrystalline 12-BaBi2S4 exhibits ultra-low thermal conductivity values, varying from 0.47 Wm−1K−1 at 323 K to 0.43 Wm−1K−1 at 773 K. The sample shows high values of the Seebeck coefficient (S = −300 μV/K to −210 μV/K) in the 323 K–773 K range with poor electrical conductivity values. The negative sign of the S implies that the sample is a n-type semiconductor. DFT studies of the 12-BaBi2S4 also predict semiconducting properties. We have explored the 12-BaBi2S4 sample for photovoltaic (PV) applications by fabricating a liquid junction solar cell, TiO2/CdS/12-BaBi2S4/Sn2−/S2−/MWCNTs@Ni, which delivered an efficiency enhanced by ∼12 % to the control cell based on sole CdS as the photo-sensitizer. Theoretical electronic structure calculations suggest the semiconducting nature of the 12-BaBi2S4 in agreement with the optical absorption and electrical resistivity studies.