Abstract
We studied the thermoelectric and electrical properties of Si-doped InSb thin films grown by Metalorganic Chemical Vapor Deposition. Their thermoelectric properties were evaluated using power factor (Pf =α2/ρ), which is an important criterion, and a value of 10-3 W/mK2 is standard for practical use. Maximum value of power factor was 3.05×10-4 W/mK2 at 1.56×10-7mol/min for Si flow rate dependence. Power factor of wholly Si-doped InSb thin film was 5.45×10-4 W/mK2, and power factor of partially Si-doped InSb thin film was 5.45×10-4 W/mK2. Si-doping may strongly influence the interface between InSb and substrate, and defects in the InSb layer near the interface could be decreased by Si doping.
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