Abstract
Conditions for control of thermal stresses during low pressure liquid encapsulated Czochralski (LP-LEC) growth of GaAs at below the plasticity limit of the matrix are calculated for various stages of growth. Results indicate that during the early stages of growth the stress field in the crystal is controlled by the cone geometry, heat transfer from the cone, and the solid-liquid interface shape. Beyond the initial stages of growth the optimum growth conditions are calculated in terms of maximum allowable heat transfer rates at the crystal periphery, and the non-planarity of the growth interface morphology. The influence of the cone geometry on the stress field during this period of growth is also investigated.
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