Abstract
A principle was proposed for designing a method to seal anodized aluminum used in semiconductor processing apparatuses. Thermodynamic calculations and Fick's second law were used to reveal trends in the metal ion deposition, deposition product stability, vapor pressures of halides for selected metal ions, the holding temperature, and time. Interactions between ion concentrations and the sealing temperature were also revealed. According to the design principles, anodized aluminum dipped in 1 mM Cr3+ ion solution and steam-sealed for 18 h exhibited the highest corrosion resistance when exposed to 5 wt.% HCl solution and HCl gas, verifying the designed results.
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