Abstract
Neuron-like mechanisms under DC bias are observed in two-port VO2 pads. We investigate these self-oscillations responses for different types of VO2 and uncovered an underlying story common to all materials on how self-oscillations arise. From the electronic responses measured as a function of temperature and time, we determined three precise conditions inducing self-oscillations and very large current spikes. Rather than being caused by an electronic capacitance as previously understood, we prove that such self-oscillations are caused by thermodynamic interactions entirely predicted by material constants. These calculations should extend to other materials, enabling the design of various low-power thermoelectronic computing circuits.
Highlights
Memristors based on phase transition (PT) materials such as VO2 have the potential to drastically impact the fields of volatile computing and active circuitry.[1,2,3]
A two port VO2 device under direct current (DC) bias undergoes self-oscillations under specific conditions which we uncovered through temperature-dependent IV measurements
A VO2 slab is a power-dependent resistor with a negative differential resistance (NDR) regime
Summary
Memristors based on phase transition (PT) materials such as VO2 have the potential to drastically impact the fields of volatile computing and active circuitry.[1,2,3] With applications ranging from spikebased learning machines,[4] to ultra-broadband compact antennas,[5,6] tunable metamaterial[7] and thermal memory.[8,9]. Authors have measured a wide range of VO2 dynamic capacitances, ranging from negative nF values[14] to aF15 or pF.[12] Ignoring how and under which electronic parameters, such as voltage and current, these devices operate is a serious hindrance to practical implementation of VO2-based memristor/neuristors for widespread applications. Fitting P1 to equation (1), we find slopes (κA, κB) identical to P0 but a constant TL=(306±1, 336±1) K for sample A and B respectively When this occurs, we have the following equations for the circuit: ICL. For W0(ex)≤0 and real, a maximum value is found for P2: P2
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