Abstract
AbstractThermodynamic properties of Inx Ga1–x N MOVPE are investigated using x ‐dependent interaction parameter. The interaction parameter (Ω = –1.3435x + 6.1607 (kcal/mol)) dependent on In composition is calculated using a molecular‐mechanics method to investigate the phase stability of InGaN. This parameter is more reliable than that proposed until now. The phase diagram and critical temperature (1392 K at x = 0.44) of Inx Ga1–x N are also obtained. With this interaction parameter, many thermodynamic characteristics of InGaN by the change of In composition, input V/III ratio, and input mol ratio of group III sources are calculated to predict the growth condition of InGaN. These results are in agreement with other data for InGaN. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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