Abstract
Using method on the base of minimizing of thermodynamic potential in “crystal-vapor” system as a function of defect concentration the equilibrium concentration of point defects and free charge carriers in zinc telluride (ZnTe) crystals have been calculated depending on the technological factors of two-temperature annealing (annealing temperature [Formula: see text] and vapor pressure [Formula: see text] of zinc or [Formula: see text] of tellurium). It is shown that the dominant defects are zinc vacancies the charge state of which depends on the technological conditions of annealing.
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