Abstract
AbstractThermodynamnies is obviously central to the ultimate goal ol an exquisite control of the electronic properties of scmiconducting devices and to the uinderstanding this will require. It should also be useful for the subsidiary goal of the firm identification of the various electrically active defects. This subsidiary goal will not be achieved unless adequate attention is paid to the reactions among the various atomic and ionization states of the defects, the electrons and the holes.
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