Abstract
The theoretical phase diagram describing the growth of SiO 2 films from TEOS and N 2O mixtures within the temperature range 500–1100°C and pressure 0.3 Torr has been obtained, minimizing the total Gibbs energy of the chemical system involved in the deposition. It was found that at temperatures up to 900°C and N 2O/TEOS molar ratios up to approximately 7, the SiO 2 films deposited contained carbon impurities. For higher N 2O/TEOS molar ratios the obtained films are carbon free. SiO 2 films were grown from TEOS/N 2O mixtures in a conventional horizontal low pressure chemical vapor deposition reactor at temperatures of 710°C and 820°C and at a pressure of 0.3 Torr. These films were analyzed using X-ray photoelectron spectroscopy, Rutherford backscattering spectroscopy, atomic force microscopy and C– V measurements taken on metal–insulator–semiconductor structures formed with the deposited films as insulators. It was found that the films contain carbon impurities the concentration of which decreases with the increase of N 2O/TEOS molar ratio, in agreement with the results of the thermodynamic study. Carbon atoms were 90% bonded to other carbon atoms and only 10% to oxygen. It was found that the films are substoichiometric in oxygen with O/Si atomic ratios ranging between 1.95 and 1.80. The films were found to be positively charged, the charge increasing with N 2O flow and decreasing with deposition temperature.
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