Abstract
Abstract In this paper the effect of diffusion formation of supersaturated solid solution in the Al–Ge system is discussed. It was shown that at relatively low temperatures of diffusion annealing, Ge concentration in Al-based solid solution became higher than the solubility limit at given temperatures. The maximal concentration of Ge was determined by extrapolation of the diffusion profile on the Ge/Al interface. Analysis of diffusivity of Al in Ge allowed to suggest that slow diffusion in Ge restricts the formation of Ge-based solid solution. Qualitative approach confirmed this suggestion.
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