Thermodynamic Considerations in the Design of Electrochemical Atomic Layer Etching of Copper

Abstract

Electrochemical atomic layer etching (e-ALE) is a unique approach for etching metals one atomic layer at a time. If practiced under optimal conditions, e-ALE ensures minimal evolution of surface roughness due to the atomic layer-by-layer etching characteristics. During e-ALE of copper (Cu), the crucial first step is the formation of a cuprous sulfide (Cu2S) monolayer via the surface-limited sulfidization reaction. In this paper, we investigate the surface coverage of this sulfide layer as a function of the sulfidization potential, and show that the equilibrium coverage attained can be modeled using the Frumkin adsorption isotherm. At a potential of –0.74 V vs SHE, sulfidization provides near-complete monolayer coverage of Cu by Cu2S, which then facilitates e-ALE in a layer-by-layer etching mode thereby maintaining a smooth post-etch surface. Operation at potentials negative with respect to –0.74 V provides sub-monolayer coverage, which manifests in roughness amplification during etching. This work provides a thermodynamics-guided foundation for the selection of operating conditions during Cu e-ALE.