Abstract

We have performed combined studies of the charge compressibility and resistance of high‐mobility 2D electron and hole systems in the region where dρ/dT changes its sign with decreasing carrier concentration — the apparent Metal‐Insulator Transition. Despite the large difference in rs, inverse compressibility in both electron and hole systems can be quantitatively explained by a nonlinear screening of disorder by the carriers. In addition, we have shown that the resistance exhibits a scaling characteristic of the percolation transition. The resistance percolation threshold, which agrees with the percolation point obtained from the analysis of the compressibility, is found to be at a lower concentration than the MIT.

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