Abstract
The carrier concentration and the densities of predominant point defects in CdTe〈I〉 crystals have been calculated as functions of two-step annealing parameters using quasi-chemical and thermodynamic modeling. We have identified the dominant native and impurity defect species, which govern the electrical properties of the material, and proposed a compensation model that takes into account not only native defects, ITe+ substitutional defects, and their complexes with native point defects, such as (VCd2−ITe+)−, and (VCd2−2ITe+)0, but also DX− centers. The equilibrium constants of formation of the VCd2−ITe+)−, defect complex and center have been evaluated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
