Abstract
A kinetic and thermodynamic analysis is carried out for reconstruction transitions on the GaAs(001) surface. It is shown that the transition from the As-stabilized (2×4)β2 to the Ga-stabilized (4×2)β2 structures under As4 flux is a nonequilibrium phase transition and occurs if a certain steady concentration of arsenic adatoms is attained on the surface. The transition is continuous and can be approximated by a three-parameter isotherm. The moving force of an adsorbate-induced transition is the stabilization energy for the (2×4)β2 phase accompanying the formation of arsenic dimers from arsenic adatoms. This energy is estimated. The features of the phase transitions occurring under the As4 flux and under desorption conditions for an amorphous-arsenic film are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
