Abstract
AbstractInfluence of temperature on AlN formation on (0001) Al2O3 surface under ammonia flux (nitridation process) has been investigated by high‐energy electron diffraction. A significant temperature dependence of AlN formation rate in the temperature range of 850‐940 °C has been found whereas the formation rate is almost constant at temperatures higher than 940 °C. A kinetic scheme of the surface reactions is developed. The values of kinetic constants for the scheme at the low temperature range are found: k1P=6×104exp(‐1.5eV/kT), k2=7×1019exp (‐5.3eV/kT), k3=3×1013exp(‐4eV/kT). For the high temperature range the AlN formation process is described as a surface phase transition in AlN lattice gas. Parameters of lateral interaction between filled AlN cells are determined and the critical temperature of the phase transition is found (Tc=795 °C). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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