Abstract
Recently, the efforts in solid-state materials include developing technologies capable of producing ZnO wafers in large dimensions and good quality based device applications. High quality bulk crystals are obtained by growing from high purity the melt. However, the thermochemical properties of ZnO (high melting point and high vapor pressure) make the growth of single crystals difficult. The thermodynamic calculations show that ZnO crystals can be grown from the melt if a suitable dynamic atmosphere composition is used. The oxygen requirement with increasing the temperature can be fulfilled by adding the NO-NO2 gases into the CO2 atmosphere. At ZnO melting point, the oxygen partial pressure of gas mixtures containing CO2-NO-CO-NO2 at Pt = 5 atm reaches to PO2 = 0.29 atm. According to this new thermodynamic result, it would be expected that ZnO crystal could be grown from the melt at lower total pressure comparing to pure CO2.
Highlights
Owing to their short-wavelength and high-power frequency properties, wide-band-gap semiconductor materials such as GaN [1], SiC [2], and ZnO [3] have been attended for variety of optoelectronics and microelectronics application
According to this new thermodynamic result, it would be expected that ZnO crystal could be grown from the melt at lower total pressure comparing to pure CO2
Because of its wurtzite crystal structure and lattice parameter (a = 3.25 A in the a-direction) ZnO is isomorphous with GaN and has potential to be used as a substrate material for GaN-based epitaxial devices [7]
Summary
Owing to their short-wavelength and high-power frequency properties, wide-band-gap semiconductor materials such as GaN [1], SiC [2], and ZnO [3] have been attended for variety of optoelectronics and microelectronics application. In the case of ZnO, a major problem is finding a suitable crucible, which can work at the high melting point and high vapor pressure of this material. Under these conditions, most crucible materials will either melt or oxidize, contaminating the ZnO melt. In the cold crucible method, known as skull crucible, the melt is contained in a thin solid shell of the same composition as the growth material. The paper is mainly focused on applying suitable operating parameters to hold ZnO melt stable during the growth process and to suppress the oxidation of iridium crucible
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