Abstract
Thermodynamic calculations of the temperature dependences of the Gibbs energy of the interface interaction of a Si melt with the surface of a SiC substrate during electron-beam treatment are conducted. The temperature regimes of phase formation are determined. According to thermodynamic analysis, a number of possible transformations of higher and lower stoichiometry carbides in SiC are proposed. The most probable reactions of SiC synthesis and dissolution in silicon are determined; it is found that the range of soluble concentrations of the substrate material is 263 ppm at T = 1685 K to 990 ppm at T = 1873 K.
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