Abstract
VO2 films were deposited on quartz glass by rf reactive magnetron sputtering with plasma emission monitoring (PEM). The effects of film thickness 30-194nm on optical properties and phase transition properties were investigated. The transmittance and semiconductor-metal phase transition (SMT) temperature decrease and reflectance of the films in metallic states increase as the thickness of films increases. For 55nm-thick VO2 film, the luminous transmittance (Tlum) and switching efficiency (∆Tsol) were about 34.1% (20°C) and 35.3 %(90°C) and 6.8%(∆Tsol). Thinner films can provide much higher luminous transmittance but they suffer from an attenuation of switching. The switching efficiency of the VO2 films does not increase monotonically as the thickness increase. Variable temperature transmission electron microscopy (TEM) measurement reveals that the SMT temperature changes for VO2 with different orientation.
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