Thermochemistry of organosilicon compounds: VI. Thermochemical properties of organosilicon compounds with a SiN bond

Abstract

We have evaluated the enthalpies of combustion and formation in the condensed and gaseous states, of fifteen organosilicon compounds containing an SiN bond, of the general formula R 4− n Si(NR′R″) n where R  H, Alkyl; R′  H, alkyl, Si(CH 3) 3; R″  alkyl, Si(CH 3) 3. The enthalpies of atomization in the gaseous phase and parameters for evaluating the enthalpies of formation and atomization of the above compounds by use of the Frankin-Benson and Tatevskii schemes have been calculated. The SiN bond energy ranges from 316.5 to 329 kJ mol −. In compounds containing an siNSi group, the SiN bond energy is lowest.