Abstract
This paper presents the results of the study of the influence of physicochemical parameters of thermochemical nitridation of sapphire substrates of different crystallographic orientations in an N2 + (CO,H2) reducing atmosphere on structural characteristics, composition, and kinetics of AlN layer formation. The effective diffusion coefficients of nitrogen in sapphire at T = 1473−1773 K have been determined. The temperature dependences of the structural quality, thickness, and roughness of the AlN layer surface have been found; their strong dependence on the composition and reduction potential of the nitridation atmosphere has been shown. The structural models of matching the AlN and sapphire lattices during thermochemical nitridation have been proposed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
