Abstract
Plasmonic induced transparency as an interesting physics behind many novel plasmonic devices is used to design a nano structure composed of graphene and Indium Antimonide (InSb). Due to temperature dependent of graphene and InSb permittivity, the structure is a good candidate for temperature sensor. The sensitivity of the proposed thermal sensor is optimized and the best value for sensitivity is obtained 160(nm/k). The switch application of the proposed structure is also analyzed and a switch with modulation depth of 98% and modulation efficiency of 82% is proposed which has very good values compare to other THz switch reported in literature.
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