Abstract
The lifetime of IGBT (Insulated Gate Bipolar Transistor) modules is limited by thermo-mechanical fatigue. Thereby bonding wires represent the critical links where damage initiation is observed. For the first time Laser Doppler Vibrometer measurements and thermal imaging were employed to determine the temperature-dependent deformations of bond wires at different frequencies under operation conditions. This should be considered as an important step to facilitate more precise life-time predictions of power modules in long term usage.
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