Abstract
AbstractThermal transport properties have been studied on as‐grown and annealed CdTe:Sb thin films of different thicknesses and concentrations of Sb. These films were prepared by sequential vacuum deposition of CdTe and Sb on clean and hot glass substrates held at 210 °C temperature at a constant rate of deposition. From these studies all the films were found to be p‐type. It is also observed that the thermoelectric power increases with Sb concentgration, thickness of the film and with annealing process.Fermi‐energy variation with temperature have been calculated on the basis of thermo emf data. All these results have been explained on the basis of defects introduced by Sb doping.
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