Abstract
We have studied the electrical conductivity of Cs vapor cells in the temperature range 190−270 °C with Cs atom density up to 3 × 10 14 cm −3 . Depending on these parameters controlled independently, two predominant mechanisms are shown to determine the electrical properties of the cells: wall surface conductivity and space conductivity. The latter is caused by thermionic emission of electrons from the “cesiated” surface at submonolayer coverage. This process has been studied for the case of metal (Ti) and dielectric (Al 2 O 3 ) surfaces. The values of the electron emission work function are found to be 1.38–1.42 V for Ti, 1.4–1.45 V for alumina and 1.39 V for sapphire. From independent photoemission studies, we also obtain the value of 1.35–1.40 V for the work function of sapphire. Our measurement technique not requiring internal electrodes can easily be implemented for studies of charge emission and ionization, in different types of dielectric cells containing a low density gas medium.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
