Abstract
Temperature dependent current-voltage characteristics and Schottky barrier height are reported for 65 nm thick TiN films deposited by atomic layer deposition on (-201) β-Ga2O3 and compared with those of reference Pt Schottky contacts. Using thermionic emission theory, a thermionic emission model for both the Pt and TiN Schottky contacts to (-201) β-Ga2O3 was determined. Both contacts had comparable barrier heights of about 1 eV and near-unity ideality factor values, independent of temperature. The TiN contact had about an order of magnitude lower reverse current at room temperature, however, at high temperature the reverse current of the Pt contact was substantially lower (0.27 mA/cm2).
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