Abstract
A model is presented to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Silicon is chosen as a model material since its optical and thermal properties are well characterized. The temporal profiles of thermionic emission current and total electron yield are obtained as a function of incident laser fluence for different surface conditions, below the silicon surface melting threshold. Two distinct regimes have been found for the dependence of the electron yield on the laser fluence due to thermionic emission and this behavior is related to Auger recombination.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.