Abstract
A thermo-electrical model which analytically describes the current flow inside abrupt heterojunction bipolar transistors (HBTs) using thermionic diffusion theory was developed. This model calculates numerically the three-dimensional temperature distribution inside the multilayer, nonplanar device structure with the help of a semi-analytical approach. This semi-analytical approach consists of a finite element program computing the heat flow in the mesa structure and an analytical solution of the temperature distribution in the substrate. The influence of the nonplanar and multilayer device structure and the effect of metal airbridges on the HBT performance is determined using this model. The phenomenon of thermal runaway in common emitter configuration is explained.
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