Abstract
Metastable orthorhombic HoMnO3 thin films with c-axis orientation were deposited epitaxially on (001) orientated Nb-1.0 wt. %-doped SrTiO3 single crystal substrates using a pulsed laser deposition technique to fabricate all-oxide p-n heterojunctions. The temperature dependent current-voltage measurements display diodelike rectifying behaviors in the temperature range of 80–260 K, and the forward current was perfectly fitted using the thermionic emission model. However, at a given reverse bias, the junction current increases with decreasing temperature, which suggests that the leakage mechanism is not just thermally limited current. This anomalous electrical transport behavior was explained by the Frenkel-Poole emission assisted tunneling through the junction.
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