Abstract
Transient materials capable of disappearing rapidly and completely are critical for transient electronics. End-capped polyoxymethylene (POM) has excellent mechanical properties and thermal stability. However, research concerning the inherent thermal instability of POM without end-capping to obtain transient rather than stable materials, has never been reported. Here, POM without end-capping is proposed as a novel thermally triggered transient solid material that can vanish rapidly by undergoing conversion to a volatile gas, and a chemical vapor deposition method is developed to obtain a smooth POM substrate from the synthesized POM powder. Experimental and theoretical analysis was employed to reveal the mechanism whereby the POM substrate formed and vanished. A Cr/Au/SiO2/Cu memristor device, which was successfully deposited on the POM substrate by physical vapor deposition, exhibits bipolar resistive switching, suggesting that the POM substrate is suitable for use in electrical devices. Thermal triggering causes the POM substrate to vanish as the memristor disintegrates, confirming excellent transient performance. The deposited bulk POM material can completely vanish by thermally triggered depolymerization, and is suitable for physically transient substrates and packaging materials, demonstrating great prospects for application in transient electronics for information security.
Highlights
Transient electronic devices, which physically disappear or undergo structural fragmentation over a specified period of time after a period of stable usage[1,2,3], are of great interest in various applications ranging from biomedical implants to environmental protection and information security[4,5,6]
Transient materials with a large bulk that disappear by changing from a solid to a volatile gas with minimal or non-traceable remains are highly desirable in transient electronics
The endothermic peak at 184 °C corresponds to the melting temperature of POM, and the other peak at 238 °C is attributed to the thermal degradation temperature of POM
Summary
Transient electronic devices, which physically disappear or undergo structural fragmentation over a specified period of time after a period of stable usage[1,2,3], are of great interest in various applications ranging from biomedical implants to environmental protection and information security[4,5,6]. We provide a method based on chemical vapor deposition (CVD) to prepare a POM substrate from the synthesized POM powder. Apart from this, the POM/Cr/Au/SiO2/Cu memristor device disintegrated when heated, triggered by the vanishing POM substrate, to show excellent transient performance.
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