Abstract
Thermally stimulated resonant current peaks are observed in Al0.4Ga0.6As/GaAs triple barrier diodes. These current peaks are interpreted as resonant tunnelings from the first excited electron subband in the first well to the first excited subband and to the second excited subband in the second well. The activation energies for these resonance peaks are measured. The results imply that in the substrate-side well there is a large amount of excess electrons to compensate the positive charge of silicon atoms segregated into the structure during the growth.
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