Abstract
We synthesized non- and Eu-doped AlN ceramics by the spark plasma sintering (SPS) method and characterized their photoluminsecence (PL) and thermally stimutrated luminescence (TSL) properties. In the PL properties, the non-doped AlN samples showed a broad emission peaking around 400 nm. In contract, the Eu-doped AlN samples showed two broad emission bands around 400 and 520 nm, and two sharp emission peaks at 610 and 700 nm. The origins of the emission peaks at 400, 520, 610 and 700 nm were due to complexes composed of Al vacancy and O impurity, 5d-4f transitons of Eu2+, 5D0→7F2 and 5D0→7F4 transitions of Eu3+, respectively. Regarding the TSL properties, the TSL intensities of the 0.01 and 0.1% Eu-doped AlN samples were higher than that of the non-doped AlN sample. It was confirmed that the 0.1% Eu-doped AlN showed a good linearity from 0.01 to 1000 mGy.
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