Abstract
Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4K, 8K, or 80K. The nominally undoped Gd2SiO5 and (Lu,Gd)2SiO5 crystals, containing traces of Ce3+, Tb3+, and Eu3+ ions, and Ce3+-doped Gd2SiO5 and (Lu,Gd)2SiO5 crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce3+- or Tb3+-related) and hole (Eu3+-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated.
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