Abstract
We present an analysis of the theory of thermally stimulated generation×recombination processes occurring in semiconductors with participation of trapping and recombination centers, based on which we develop algorithms for a program for computer processing of experimental data and simulation of the thermally stimulated conductivity and thermally stimulated luminescence spectra. We determine the characteristic parameters of the trapping centers. We compare the results of computer simulation with experimentally observed thermally stimulated luminescence spectra of ZnO single crystals and nanocrystals.
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