Abstract
Deep traps in amorphous selenium are measured using a thermally stimulated current (TSC) technique. A peak is found in the TSC curve, which arises from the thermal liberation of trapped carriers in the bulk of amorphous selenium. It is found that the trapped carriers are mainly positive holes in the temperature range 170∼310 °K. Three methods (Grossweiner’s method, initial rise plot method, and varying temperature rising rate method) are applied to obtain the trap activation energy. It is concluded that the trap activation energies are distributed from 0.6 to 1.1 eV.
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