Year-end Sale % OFF 
Abstract
ZnO varistor degradation phenomena was studied using thermally stimulated current (TSC) method. It is believed that asymmetrical degradation of V-I characteristics caused by DC biasing is due to charge accumulation on the reverse biased side of ZnO grain barrier. The TSCs' measuring system and cryostat apparatus used in experiment were described. The thermally stimulated currents observed in this study for varistor samples doped with different amounts of Co, due to their recovery from asymmetrical electric stress, could not be controlled by movement of Zn interstitials with activation energy 0.55 v eV, as it is widely believed, for the TSC activation energy determined in this experiment was 0.39 v eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
